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| inchange semiconductor product specification silicon npn power transistors BD675A/677a/679a/681 description ? ? with to-126 package ? complement to type bd676a/678a/680a/682 ? darlington applications ? for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD675A 45 bd677a 60 bd679a 80 v cbo collector-base voltage bd681 open emitter 100 v BD675A 45 bd677a 60 bd679a 80 v ceo collector-emitter voltage bd681 open base 100 v v ebo emitter -base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 6 a i b base current 0.1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BD675A/677a/679a/681 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD675A 45 bd677a 60 bd679a 80 v ceo(sus) collector-emitter sustaining voltage bd681 i c =50ma; i b =0 100 v BD675A/677a/679a i c =2a; i b =40ma 2.8 v cesat collector-emitter saturation voltage bd681 i c =1.5a; i b =30ma 2.5 v BD675A/677a/679a i c =2a ; v ce =3v 2.5 v be(on) base-emitter voltage bd681 i c =1.5a ; v ce =3v 2.5 v BD675A v cb =45v; i e =0 bd677a v cb =60v; i e =0 bd679a v cb =80v; i e =0 i cbo collector cut-off current bd681 v cb =100v; i e =0 0.2 ma BD675A v ce =45v; v be =0 bd677a v ce =60v; v be =0 bd679a v ce =80v; v be =0 i ceo collector cut-off current bd681 v ce =100v; v be =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 2 ma BD675A/677a/679a i c =2a ; v ce =3v 750 h fe dc current gain bd681 i c =1.5a ; v ce =3v 750 inchange semiconductor product specification 3 silicon npn power transistors BD675A/677a/679a/681 package outline fig.2 outline dimensions |
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